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RT7280 bảng dữ liệu(PDF) 19 Page - Richtek Technology Corporation |
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RT7280 bảng dữ liệu(HTML) 19 Page - Richtek Technology Corporation |
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19 / 22 page ![]() RT7274/79/80/81 19 DS7274/79/80/81-01 February 2013 www.richtek.com © Copyright 2013 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. Figure 5. External Bootstrap Diode PVCC Capacitor Selection Decouple with a 1 μF ceramic capacitor. X7R or X5R grade dielectric ceramic capacitors are recommended for their stable temperature characteristics. Over Current Protection When the output shorts to ground, the inductor current decays very slowly during a single switching cycle. An over current detector is used to monitor inductor current to prevent current runaway. The over current detector monitors the voltage between SW and GND during the low side MOS turn-on state. This is cycle-by-cycle protection. be taken when these capacitors are used at input and output. When a ceramic capacitor is used at the input and the power is supplied by a wall adapter through long wires, a load step at the output can induce ringing at the input, VIN. A sudden inrush of current through the long wires can potentially cause a voltage spike at VIN large enough to damage the part. External Bootstrap Diode Connect a 0.1 μF low ESR ceramic capacitor between the BOOT and SW pins. This capacitor provides the gate driver voltage for the high side MOSFET. It is recommended to add an external bootstrap diode between an external 5V and the BOOT pin for efficiency improvement when input voltage is lower than 5.5V or duty ratio is higher than 65%. The bootstrap diode can be a low cost one such as 1N4148 or BAT54. The external 5V can be a 5V fixed input from system or a 5V output of the RT7274/79/80/81. Note that the external boot voltage must be lower than 5.5V SW BOOT 5V 0.1µF RT7274/79/80/81 Time (1ms/Div) Latch-Mode VOUT (1V/Div) ILX (2A/Div) VLX (10V/Div) Thermal Considerations For continuous operation, do not exceed absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated by the following formula : PD(MAX) = (TJ(MAX) − TA) / θJA where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJAis the junction to ambient thermal resistance. For recommended operating condition specifications, the maximum junction temperature is 125 °C. The junction to ambient thermal resistance, θJA, is layout dependent. For TSSOP-14 (Exposed Pad) package, the thermal resistance, θJA, is 40°C/W on a standard JEDEC 51-7 four-layer thermal test board. For SOP-8 (Exposed Pad) Under Voltage Protection Latch-Off Mode (RT7279/80) For the RT7279GCP/RT7280GCP, it provides Latch-Off Mode Under Voltage Protection (UVP). When the FB pin voltage drops below 70% of the feedback threshold voltage, UVP will be triggered and the RT7279GCP/RT7280GCP will shutdown in Latch-Off Mode. In shutdown condition, the RT7279GCP/RT7280GCP can be reset by the EN pin or power input, VIN. |
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