ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ

LLDB3/LLDC34/LLDB4/LLDB6

SILICON BIDIRECTIONAL DIAC

ABSOLUTE RATINGS(LIMITING VALUES)

ELECTRICAL CHARACTERISTICS

Power Dissipation on Printed

Circuit(L=10mm)

Breakover Voltage (Note 2 )

Breakover Voltage Symmetry

C=22nF(Note 2)

See diagram 1

C=22nF(Note 2)

See diagram 1

C=22nF(Note 2)

Min

Min

Min

Typ

28

32

36

30

34

38

35

40

45

56

60

70

+4

+3

5

10

5

100

1.5

10

Max

Max

Max

Max

Typ

I=(I

to IF=10mA)

See Diagram 1

BO

See Diagram 2

See Diagram 3

V =0.5 V

max

see diagram 1

BBO

Breakover Current (Note1)

Leakage Current (Note1)

Dynamic Breakover Voltage (Note1)

Rise Time (Note1)

Output Voltage (Note 1 )

mW

A

T =50 C

A

tp=10 s

f=100Hz

m

Repetitive Peak on-state

Current

Storage and Operating Junction Temperature

-40 to+125

C

V

V

V

V

mA

ms

mA

││

+VBO

-

+V

││

tr

2.0

1.6

150

2.Connected in parallel with the devices.

MECHANICAL DATA

Case

Weight

: MiniMELF glass case(SOD-80)

: Approx. 0.05 gram

Symbols

Parameters

Value

LLDB3

LLDC34

LLDB4

LLDB6

Units

Value

LLDB3

LLDC34

LLDB4

LLDB6

Units

Parameters

Symbols

Test Condition

││

-VBO

FEATURES

The three-layer, two-terminal, axial-lead, hermetically sealed diacs are

designed specifically for triggering thyristors. They demonstrate low breakover

current at breakover voltage as they withstand peak pulse current. The breakover

symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are

intended for use in thyrisitors phase control , circuits for lamp dimming, universal

motor speed control and heat control.

JF's DB3/DC34/DB4/DB6 are bi-directional triggered diode designed to operate

in conjunction with Triacs and SCR's

High temperature soldering guaranteed 260

10 seconds at terminals

:℃/

MiniMELF

Dimensions in inches and (millimeters)

0.142(3.6)

0.126(3.2)

0.019(0.48)

0.011(0.28)

0.063(1.6)

0.055(1.4)

星合电子

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