AT45DB081D_13 datasheet(26/53 Pages) AD

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3596O–DFLASH–1/2013

AT45DB081D

14.2 Operation Mode Summary

The commands described previously can be grouped into four different categories to better

describe which commands can be executed at what times.

Group A commands consist of:

1. Main Memory Page Read

2. Continuous Array Read

3. Read Sector Protection Register

4. Read Sector Lockdown Register

5. Read Security Register

Group B commands consist of:

1. Page Erase

2. Block Erase

3. Sector Erase

4. Chip Erase

5. Main Memory Page to Buffer 1 (or 2) Transfer

6. Main Memory Page to Buffer 1 (or 2) Compare

7. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase

8. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase

9. Main Memory Page Program through Buffer 1 (or 2)

10. Auto Page Rewrite

Group C commands consist of:

1. Buffer 1 (or 2) Read

2. Buffer 1 (or 2) Write

3. Status Register Read

4. Manufacturer and Device ID Read

Group D commands consist of:

1. Erase Sector Protection Register

2. Program Sector Protection Register

3. Sector Lockdown

4. Program Security Register

If a Group A command is in progress (not fully completed), then another command in Group A,

B, C, or D should not be started. However, during the internally self-timed portion of Group B

commands, any command in Group C can be executed. The Group B commands using buffer 1

should use Group C commands using buffer 2 and vice versa. Finally, during the internally self-

timed portion of a Group D command, only the Status Register Read command should be

executed.

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