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ADM488AR bảng dữ liệu(PDF) 9 Page - Analog Devices |
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ADM488AR bảng dữ liệu(HTML) 9 Page - Analog Devices |
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9 / 12 page ![]() ADM488/ADM489 –9– REV. 0 The fast transient burst test, defined in IEC1000-4-4, simulates this arcing and its waveform is illustrated in Figure 20. It consists of a burst of 2.5 kHz to 5 kHz transients repeating at 300 ms intervals. It is specified for both power and data lines. Four severity levels are defined in terms of an open-circuit volt- age as a function of installation environment. The installation environments are defined as 1. Well-protected 2. Protected 3. Typical Industrial 4. Severe Industrial 300ms 16ms V t V 0.2/0.4ms t 5ns 50ns Figure 20. IEC1000-4-4 Fast Transient Waveform Table III shows the peak voltages for each of the environments. Table III. VPEAK (kV) VPEAK (kV) Level PSU I-O 1 0.5 0.25 2 1 0.5 32 1 44 2 A simplified circuit diagram of the actual EFT generator is illustrated in Figure 21. These transients are coupled onto the signal lines using an EFT coupling clamp. The clamp is 1 m long and completely sur- rounds the cable, providing maximum coupling capacitance (50 pF to 200 pF typ) between the clamp and the cable. High energy transients are capacitively coupled onto the signal lines. Fast rise times (5 ns) as specified by the standard result in very effective coupling. This test is very severe since high voltages are coupled onto the signal lines. The repetitive transients can often cause problems, where single pulses do not. Destructive latchup may be induced due to the high energy content of the transients. Note that this stress is applied while the interface products are powered up and are transmitting data. The EFT test applies hundreds of pulses with higher energy than ESD. Worst case transient current on an I-O line can be as high as 40 A. HIGH VOLTAGE SOURCE RC CC ZS LRM CD 50 OUTPUT Figure 21. EFT Generator Test results are classified according to the following: 1. Normal performance within specification limits. 2. Temporary degradation or loss of performance that is self- recoverable. 3. Temporary degradation or loss of function or performance that requires operator intervention or system reset. 4. Degradation or loss of function that is not recoverable due to damage. The ADM488/ADM489 has been tested under worst case con- ditions using unshielded cables, and meets Classification 2 at severity Level 4. Data transmission during the transient condi- tion is corrupted, but it may be resumed immediately following the EFT event without user intervention. RADIATED IMMUNITY (IEC1000-4-3) IEC1000-4-3 (previously IEC801-3) describes the measurement method and defines the levels of immunity to radiated electro- magnetic fields. It was originally intended to simulate the elec- tromagnetic fields generated by portable radio transceivers or any other device that generates continuous wave radiated electro- magnetic energy. Its scope has since been broadened to include spurious EM energy, which can be radiated from fluorescent lights, thyristor drives, inductive loads, etc. Testing for immunity involves irradiating the device with an EM field. There are various methods of achieving this including use of anechoic chamber, stripline cell, TEM cell and GTEM cell. These consist essentially of two parallel plates with an electric field developed between them. The device under test is placed between the plates and exposed to the electric field. There are three severity levels having field strengths ranging from 1 V to 10 V/m. Results are classified as follows: 1. Normal Operation. 2. Temporary Degradation or loss of function that is self- recoverable when the interfering signal is removed. 3. Temporary degradation or loss of function that requires operator intervention or system reset when the interfering signal is removed. 4. Degradation or loss of function that is not recoverable due to damage. |
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