SFP830D datasheet(2/5 Pages) SEMIWELL

tên linh kiện	SFP830D

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SFP830D

Thermal Characteristics

Symbol

Parameter

Ratings

Unit

RθJC

Thermal Resistance Junction to Case

1.65

℃/W

RθCS

Thermal Resistance Case to Sink Typ.

0.5

℃/W

RθJA

Thermal Resistance Junction to Ambient

62.5

℃/W

Electrical Characteristics ( TC = 25℃ Unless otherwise noted)

Symbol

Items

Conditions

Ratings

Unit

Min

Typ.

Max

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250uA

500

ΔBVDSS

/ΔTJ

Breakdown

Voltage

Temperature

coefficient

ID =250uA, Reference to 25℃

0.6

V/℃

IDSS

Zero gate voltage Drain Current

VDS = 500V, VGS = 0V

VDS = 400V, TS = 125℃

IGSSF

Gate body leakage current Forward

VGS = 30V, VDS = 0V

100

IGSSR

Gate body leakage current Reverse

VGS = -30V, VDS = 0V

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250uA

2.0

4.0

RDS(ON)

Static Drain-Source On-Resistance

VGS = 10V, ID = 2.5A

1.1

1.5

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0V

f = 1.0MHz

525

Coss

output Capacitance

Crss

Reverse Transfer Capacitance

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