AOD458_11 datasheet(2/6 Pages) AOSMD

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AOD458

Symbol

Min

Typ

Max

Units

250

300

BVDSS

/∆TJ

0.27

IGSS

Gate-Body leakage current

±100

VGS(th)

Gate Threshold Voltage

3.8

4.5

RDS(ON)

0.22

0.28

Ω

gFS

VSD

0.74

Maximum Body-Diode Continuous Current

ISM

Ciss

505

637

770

Coss

104

140

Crss

7.1

1.3

2.6

3.9

Ω

912

Qgs

3.8

Qgd

4.6

tD(on)

tD(off)

trr

120

150

180

Qrr

1.24

1.5

µC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V

Maximum Body-Diode Pulsed Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

Turn-Off DelayTime

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=200V, ID=14A

Gate Source Charge

Gate Drain Charge

IS=1A,VGS=0V

VDS=40V, ID=7A

VDS=0V, VGS=±30V

VGS=10V, ID=7A

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

VDS=5V, ID=250µA

VDS=200V, TJ=125°C

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=250V, VGS=0V

IF=14A,dI/dt=100A/µs,VDS=100V

VGS=0V, VDS=25V, f=1MHz

SWITCHING PARAMETERS

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

BVDSS

µA

Drain-Source Breakdown Voltage

Body Diode Reverse Recovery Time

Static Drain-Source On-Resistance

DYNAMIC PARAMETERS

Turn-On Rise Time

Forward Transconductance

VGS=10V, VDS=125V, ID=14A,

RG=25Ω

Gate resistance

Diode Forward Voltage

Reverse Transfer Capacitance

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=175°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting

the upper dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T J(MAX)=175°C.

G.These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

H. L=60mH, IAS=3.4A, VDD=150V, RG=10Ω, Starting TJ=25°C

Rev0: April 2011

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