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27291SL bảng dữ liệu(PDF) 6 Page - Freescale Semiconductor, Inc

tên linh kiện 27291SL
Giải thích chi tiết về linh kiện  RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
PDF  20 Pages
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nhà sản xuất  FREESCALE [Freescale Semiconductor, Inc]
Trang chủ  http://www.freescale.com
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27291SL bảng dữ liệu(HTML) 6 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
TYPICAL CHARACTERISTICS — 860 MHz
IDS(Q) = 100 mA
Figure 4. Normalized VGS Quiescent versus
Case Temperature
3.3
0
10
2.1
2.3
2.2
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 5. Drain Current versus Gate--Source Voltage
2.4
9
4
VDD =50 Vdc
Note: Measured with both sides of the transistor tied together.
TC, CASE TEMPERATURE (°C)
1.06
1.05
1.04
1.02
1.01
1.03
1
0.99
0.98
0.97
0.96
0.95
0.94
100
--50
0
--25
25
50
75
1400 mA
1900 mA
2400 mA
VDD =50 Vdc
8
7
6
5
2
3
1
2.6
2.5
2.7
2.9
2.8
3
3.1 3.2
40 Vdc
30 Vdc
20 Vdc
10 Vdc
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Drain--Source Voltage
30
100
10
40
Coss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
Note: Each side of device measured separately.
Crss
50
64
32
62
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
60
43
58
36
37
38
39
40
41
42
P3dB = 59.0 dBm (794 W)
Actual
Ideal
P2dB = 58.8 dBm (759 W)
VDD =50 Vdc,IDQ = 1400 mA, f = 860 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
56
54
34
35
33
P1dB = 58.4 dBm (692 W)
52
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
16
22
10
19
21
20
100
1000
ηD
Gps
18
17
VDD =50 Vdc,IDQ = 1400 mA
f = 860 MHz
Pulse Width = 100 μsec
Duty Cycle = 10%
0
60
50
20
40
30
10



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