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AD845 bảng dữ liệu(PDF) 3 Page - Analog Devices |
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AD845 bảng dữ liệu(HTML) 3 Page - Analog Devices |
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3 / 8 page ![]() AD845 REV. D –3– ORDERING GUIDE Temperature Package Package Model Range Description Option* AD845JN 0 °C to +70°C 8-Pin Plastic Mini-DIP N-8 AD845KN 0 °C to +70°C 8-Pin Plastic Mini-DIP N-8 AD845JR-16 0 °C to +70°C 16-Pin SOIC R-16 AD845AQ –40 °C to +85°C 8-Pin Cerdip Q-8 AD845BQ –40 °C to +85°C 8-Pin Cerdip Q-8 AD845SQ –55 °C to +125°C 8-Pin Cerdip Q-8 AD845SQ/883B –55 °C to +125°C 8-Pin Cerdip Q-8 5962-8964501PA –55 °C to +125°C 8-Pin Cerdip Q-8 AD845JCHIPS 0 °C to +70°C Die AD845SCHIPS –55 °C to +125°C Die AD845JR-16-REEL 0 °C to +70°C Tape & Reel AD845JR-16-REEL7 0 °C to +70°C Tape & Reel ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V Internal Power Dissipation 2 Plastic Mini-DIP . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6 Watts Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4 Watts 16-Pin SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 Watts Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . + VS Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite Differential Input Voltage . . . . . . . . . . . . . . . . . . +VS and –VS Storage Temperature Range Q . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65 °C to +150°C N, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65 °C to +125°C Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300 °C NOTES 1Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability . 2Mini-DIP package: θ JA = 100°C/watt; cerdip package: θJA = 110°C/watt. SOIC package: θ JA = 100°C/W. METALIZATION PHOTOGRAPH Dimensions shown in inches and (mm). Contact factory for latest dimensions. SUBSTRATE CONNECTED TO +V S |
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