AO8804_09 datasheet(2/4 Pages) AOSMD

2 / 4 page

AO8804

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

µA

BVGSO

±12

VGS(th)

0.5

0.75

ID(ON)

11.5

TJ=125°C

13.3

15.5

15.4

22.2

gFS

VSD

0.73

2.4

Ciss

1810

Coss

232

Crss

200

1.6

Ω

17.9

Qgs

1.5

Qgd

4.7

tD(on)

2.5

7.2

tD(off)

10.8

trr

20.2

Qrr

8nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=8A

VGS=3.8V, ID=5A

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

IF=8A, dI/dt=100A/µs

Reverse Transfer Capacitance

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=10V, RL=1.2Ω,

RGEN=3Ω

Turn-On DelayTime

IF=8A, dI/dt=100A/µs

SWITCHING PARAMETERS

µA

VGS=4.5V, VDS=5V

VGS=4.5V, ID=5A

Gate-Body leakage current

Gate-Source Breakdown Voltage

VDS=0V, IG=±250uA

Gate Threshold Voltage

Ω

VDS=VGS ID=250µA

VDS=16V, VGS=0V

VDS=0V, VGS=±10V

VDS=5V, ID=8A

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

IS=1A,VGS=0V

DYNAMIC PARAMETERS

VGS=0V, VDS=10V, f=1MHz

VGS=2.5V, ID=4A

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

VGS=1.8V, ID=3A

Forward Transconductance

Diode Forward Voltage

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=4.5V, VDS=10V, ID=8A

Gate Source Charge

Gate Drain Charge

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

Rev

4: Feb 2009

Alpha & Omega Semiconductor, Ltd.

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