AO7415_11 datasheet(2/5 Pages) AOSMD

2 / 5 page

AO7415

Symbol

Min

Typ

Max

Units

BVDSS

-20

VDS=-20V, VGS=0V

-1

TJ=55°C

-5

IGSS

±10

µA

VGS(th)

Gate Threshold Voltage

-0.5

-0.85

-1.2

ID(ON)

-13

100

TJ=125°C

115

125

Ω

130

170

Ω

gFS

VSD

-0.76

-1

Ciss

250

325

400

Coss

Crss

11.2

Ω

3.2

4.5

Qgs

0.6

Qgd

0.9

tD(on)

5.5

Turn-On Rise Time

Gate Drain Charge

Turn-On DelayTime

Total Gate Charge

VGS=-4.5V, VDS=-10V, ID=-2A

Gate Source Charge

Reverse Transfer Capacitance

VGS=0V, VDS=-10V, f=1MHz

SWITCHING PARAMETERS

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Ω

Static Drain-Source On-Resistance

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

RDS(ON)

IDSS

µA

VDS=VGS, ID=-250µΑ

VDS=0V, VGS= ±12V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Drain-Source Breakdown Voltage

On state drain current

IS=-1A,VGS=0V

VDS=-5V, ID=-2A

VGS=-2.5V, ID=-1.0A

ID=-250µA, VGS=0V

=-10V, V =-10V, R =5

Ω,

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Diode Forward Voltage

Forward Transconductance

VGS=-4.5V, VDS=-5V

VGS=-10V, ID=-2A

VGS=-4.5V, ID=-1.3A

5.5

tD(off)

trr

6.1

Qrr

1.4

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs

Turn-On Rise Time

Turn-Off DelayTime

IF=-2A, dI/dt=100A/µs

Turn-Off Fall Time

Body Diode Reverse Recovery Time

VGS=-10V, VDS=-10V, RL=5Ω,

RGEN=3Ω

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J=25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

Rev 3: Nov 2011

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