AO6403_11 datasheet(2/5 Pages) AOSMD

2 / 5 page

AO6403

Symbol

Min

Typ

Max

Units

BVDSS

-30

VDS=-30V, VGS=0V

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

Gate Threshold Voltage

-1.3

-1.85

-2.4

ID(ON)

-30

TJ=125°C

Ω

gFS

VSD

-0.8

-1

-2.5

Ciss

760

Coss

140

Crss

1.5

3.2

Ω

Qg(10V)

13.6

Qg(4.5V)

6.7

Qgs

2.5

Qgd

3.2

tD(on)

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

=-10V, V =-15V, R =2.7

Ω,

Total Gate Charge

VGS=-10V, VDS=-15V, ID=-6A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

IS=-1A,VGS=0V

VDS=-5V, ID=-6A

VGS=-4.5V, ID=-5A

Forward Transconductance

Diode Forward Voltage

Gate resistance

VGS=0V, VDS=0V, f=1MHz

µA

VDS=VGS ID=-250µA

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Ω

On state drain current

ID=-250µA, VGS=0V

VGS=-10V, VDS=-5V

VGS=-10V, ID=-6A

RDS(ON)

Static Drain-Source On-Resistance

IDSS

Reverse Transfer Capacitance

VGS=0V, VDS=-15V, f=1MHz

SWITCHING PARAMETERS

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

tD(off)

trr

Qrr

9.7

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=2.7Ω,

RGEN=3Ω

Turn-Off Fall Time

IF=-6A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

Rev 4: Nov 2011

www.aosmd.com

Page 2 of 5

AO6403 bảng dữ liệu(PDF) 2 Page - Alpha & Omega Semiconductors

AO6403 bảng dữ liệu(HTML) 2 Page - Alpha & Omega Semiconductors

Html Pages

1 2 3 4 5

bảng dữ liệu tải về

Link URL