AO4622_10 datasheet(2/9 Pages) AOSMD

2 / 9 page

AO4622

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

VGS(th)

0.6

1.25

ID(ON)

TJ=125°C

33.6

Ω

gFS

VSD

0.7

Ciss

900

1100

Coss

162

Crss

105

0.9

1.35

Ω

Qg(10V)

Qg(4.5V)

7.2

Qgs

1.8

Qgd

2.8

tD(on)

4.5

9.2

tD(off)

18.7

3.3

trr

Qrr

9.5

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=16V, VGS=0V

Gate-Body leakage current

VDS=0V, VGS=±16V

Gate Threshold Voltage

VDS=VGS ID=250µA

On state drain current

VGS=4.5V, VDS=5V

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=7.3A

Ω

VGS=2.5V, ID=2A

VGS=4.5V, ID=6.4A

Forward Transconductance

VDS=5V, ID=7.3A

Diode Forward Voltage

IS=1A

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=10V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=10V, ID=6.5A

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

VGS=10V, VDS=10V, RL=1.4Ω,

RGEN=3Ω

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=7.3A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The value

in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to

thermal resistance from junction to drain lead.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t ≤ 10s thermal resistance rating.

Rev5: Nov 2010

Alpha & Omega Semiconductor, Ltd.

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