AO4485_10 datasheet(2/4 Pages) AOSMD

2 / 4 page

AO4485

Symbol

Min

Typ

Max

Units

BVDSS

-40

-1

TJ = 55°C

-5

IGSS

±100

VGS(th)

-1.7

-1.9

-2.5

ID(ON)

-120

12.5

TJ=125°C

gFS

VSD

-0.7

-1

-3

Ciss

2500

3000

Coss

260

Crss

180

2.5

Ω

Qg (10V)

Qg (4.5V)

18.6

Qgs

Qgd

8.6

tD(on)

9.4

tD(off)

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

On state drain current

ID = -250µA, VGS = 0V

VGS = -10V, VDS = -5V

VDS = -40V, VGS = 0V

VDS = 0V, VGS = ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs

VGS = -10V, ID = -10A

Reverse Transfer Capacitance

IF=-10A, dI/dt=100A/µs

Static Drain-Source On-Resistance

Diode Forward Voltage

VGS = -4.5V, ID = -8A

Ω

Gate Threshold Voltage

VDS = VGS ID = -250µA

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

RDS(ON)

Drain-Source Breakdown Voltage

Turn-Off DelayTime

VGS=-10V, VDS=-20V,

RL= 2Ω, RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Turn-On Rise Time

Gate Source Charge

Gate Drain Charge

µA

Total Gate Charge

VGS=-10V, VDS=-20V, ID=-10A

Output Capacitance

IS = -1A,VGS = 0V

VDS = -5V, ID = -10A

Forward Transconductance

Gate resistance

SWITCHING PARAMETERS

DYNAMIC PARAMETERS

Maximum Body-Diode Continuous Current

Total Gate Charge

VGS=0V, VDS=0V, f=1MHz

VGS=0V, VDS=-20V, f=1MHz

Input Capacitance

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A = 25°C. The

value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t ≤ 10s thermal resistance rating.

G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.

Rev1: Nov. 2010

Alpha & Omega Semiconductor, Ltd.

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