ACE2342 datasheet(3/8 Pages) ACE

tên linh kiện	ACE2342

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode MOSFET

PDF	8 Pages

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nhà sản xuất	ACE [ACE Technology Co., LTD.]

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ACE2342

N-Channel Enhancement Mode MOSFET

VER 1.3

Electrical Characteristics

(TA=25℃, Unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

0.4

1.0

Gate Leakage Current

IGSS

VDS=0.V, VGS=±12V

±100

Zero Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

VDS=20V, VGS=0V TJ=55℃

On-State Drain Current

ID(ON)

VDS≧5V, VGS=4.5V

Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=5.0A

0.026

0.035

VGS=2.5V, ID=4.5A

0.029

0.040

VGS=1.8V, ID=4.0A

0.035

0.048

Forward Transconductance

Gfs

VDS=15V, ID=5.0A

Diode Forward Voltage

VSD

IS=-1.0A, VGS=0V

0.8

1.2

Dynamic

Total Gate Charge

VDS=10V, VGS=4.5V,

ID≡5.0A

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

2.1

Input Capacitance

Ciss

VDS=10V, VGS=0V,

f=1MHz

600

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

100

Turn-On Time

td(on)

VDD=10V, RL=10Ω

ID≡1.0A, VGEN=4.5V

RG=6Ω

Turn-Off Time

td(off)

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