FH105A

No. A1126-2/8

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=10V, IE=0A

1.0

μA

Emitter Cutoff Current

IEBO

VEB=1V, IC=0A

10

μA

DC Current Gain

hFE

VCE=5V, IC=10mA

90

200

DC Current Gain Ratio

hFE(small/large) VCE=5V, IC=10mA

0.7

0.95

Base-to-Emitter Voltage Diffrence

VBE(large-small) VCE=5V, IC=10mA

1.0

mV

Gain-Bandwidth Product

fT

VCE=5V, IC=10mA

5

8

GHz

Output Capacitance

Cob

VCB=10V, f=1MHz

0.45

0.7

pF

Forward Transfer Gain

⏐S21e⏐

2

VCE=5V, IC=10mA, f=1.5GHz

8

10

dB

Noise Figure

NF

VCE=5V, IC=5mA, f=1.5GHz

1.4

3.0

dB

Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which

pair capability is also shown.

Ordering Information

Device

Package

Shipping

memo

FH105A-TR-E

MCP6

3,000pcs./reel

Pb Free

Collector Current, IC -- mA

hFE -- IC

Collector Current, IC -- mA

f T -- IC

3

2

100

7

5

5

3

2

10

7

5

0.1

1.0

10

23

5

7

100

2

3

57

2

3

57

VCE=5V

IT00322

IT14098

1.0

23

3

57

10

5

2

7

5

1.0

3

2

10

2

VCE

=5V

VCE

=1V