US2302 datasheet(2/6 Pages) UNITPOWER

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US2302

N-Ch 20V Fast Switching MOSFETs

Electrical Characteristics (TJ=25

, unless otherwise noted)

US2302

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

STATIC CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

VDS=16V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

0.5

0.7

IGSS

Gate Leakage Current

VGS=±10V, VDS=0V

±10

µA

VGS=4.5V, IDS=3A

VGS=2.5V, IDS=2A

RDS(ON)

Drain-Source On-state Resistance

VGS=1.8V, IDS=0.5A

120

200

Ω

VSD

Diode Forward Voltage

ISD=1A, VGS=0V

0.7

1.3

GATE CHARGE CHARACTERISTICS

Total Gate Charge

4.4

Qgs

Gate-Source Charge

0.5

Qgd

Gate-Drain Charge

VDS=10V, VGS=4.5V,

IDS=3A

1.6

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

DYNAMIC CHARACTERISTICS

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Ω

Ciss

Input Capacitance

320

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=10V,

Frequency=1.0MHz

td(ON)

Turn-On Delay Time

Turn-On Rise Time

td(OFF)

Turn-Off Delay Time

Turn-Off Fall Time

VDD=10V, RL=10

Ω,

IDS=1A, VGEN=4.5V,

RG=6

Ω

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ISD=3A, dlSD/dt=100A/

µs

Note a : Pulse test ; pulse width

≤300

µs, duty cycle≤2%.

Note b : Guaranteed by design, not subject to production testing.

US2302

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