US2301 datasheet(2/6 Pages) UNITPOWER

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US2301

P-Ch 20V Fast Switching MOSFETs

Electrical Characteristics (TJ=25

, unless otherwise noted)

Symbol

Parameter

Test Condition

US2301

Unit

Min.

Typ.

Max.

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=-250μA

-20

IDSS

Zero Gate Voltage Drain Current

VDS=-16V, VGS=0V

-1

μA

TJ=85°C

-30

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250μA

-0.45

-0.7

-1

IGSS

Gate Leakage Current

VGS=±12V, VDS=0V

±100

RDS(ON)

Drain-Source On-state Resistance

VGS=-4.5V, IDS=-2.5A

110

VGS=-2.5V, IDS=-2A

110

150

VSD

Diode Forward Voltage

ISD=-0.5A , VGS=0V

-0.8

-1.3

Gate Charge Characteristics

Total Gate Charge

VDS=-10V, VGS=-4.5V,

IDS=-2.5A

Qgs

Gate-Source Charge

0.7

Qgd

Gate-Drain Charge

0.6

Symbol

Parameter

Test Condition

US2301

Unit

Min.

Typ.

Max.

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

9.2

Ciss

Input Capacitance

VGS=0V,

VDS=-15V,

Frequency=1.0MHz

360

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

VDD=-10V, RL=10Ω

IDS=-1A, VGEN=-4.5V,

RG=6Ω

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

Notes：

a : Pulse test ; pulse width

≤300

μs, duty cycle≤2%.

b : Guaranteed by design, not subject to production testing.

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