MJE13005 datasheet(2/3 Pages) COMSET

2 / 3 page

MJE13005

02/10/2012

COMSET SEMICONDUCTORS

2/3

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO

Collector-Emitter

Sustaining Voltage (*)

IC= 10 mA, IB= 0

400

ICBO

Collector- Cutoff Current

VCB = 700 V

IB= 0

TC= 25°C

TC= 100°C

IEBO

Emitter Cutoff Current

VEB= 9 V, IC= 0

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 1 A, IB= 200 mA

0.5

IC= 2 A

IB= 500 mA

TC= 25°C

0.6

TC= 100°C

IC= 4 A, IB= 1 A

VBE(SAT)

Base-Emitter Saturation

Voltage (*)

IC= 1 A, IB= 200 mA

1.2

IC= 2 A

IB= 500 mA

TC= 25°C

1.6

TC= 100°C

1.5

hFE

Forward Current transfer

ratio (*)

VCE= 5.0 V, IC= 1 A

VCE= 5.0 V, IC= 2 A

Transition Frequency

VCE= 10 V, IC= 0.5 A, f= 1 MHz

MHz

COB

Output Capacitance

IE= 0 ; VCB= 10 V ; f= 1 MHz

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

SWITCHING TIMES.

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

Delay Time

VCC= 125 V; IC= 2 A

IB1= -IB2= 400 mA

tp = 25 µs, duty cycle <1%.

0.1

µs

Rise time

0.7

Storage Time

Fall Time

0.9

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