AMG-DF102

Full Bridge MOSFET/IGBT Driver up to 600V

3.1. Example Application Drawing

3.2. Application Notes

Transistors, bootstrap diodes and caps physically need to be placed as close as possible to

the IC. Via's and 90º trace curves should be avoided. For best performance the distance

between the transistors, bootstrap diodes and caps - and the IC should be kept under 1cm,

traces to the transistors should be straight and min. 1mm wide, if needed only 45º trace

curves. Bootstrap diodes need to be fast switching diodes. Bootstrap capacitors need to have

low ESR. Traces to/from the bootstrap diodes and caps should be min. 1mm wide, as short as

possible and only 45º curves used.

Additional information may be found in Application Note: AMG-AN-DF102

AMG-DF102

Revision: AB

30. Nov. 2010

© All rights reserved

Page 2 of 12

Figure 1: Please insert a clear example application drawing here.

VS

IH

GND

400V (PFC)

LOAD

IN1

IN2

GND

VBH

HOH

VSH

VB1

H01

IN2

IN1

INB

VS1

L01

VB2

H02

VS2

L02