SICF3SV2 datasheet(2/4 Pages) SECELECTRONICS

2 / 4 page

Current Sensors

SICF3SV2

V2.00

May 1, 2012

General Description

For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between

the primary circuit (high power) and the secondary circuit (electronic circuit)

Parameters Table

PARAMETERS

SYMBOL

UNIT

VALUE

CONDITIONS

Electrical data

Supply voltage(±5%)

±15

Current consumption

22+Is

IPN=100A

100

IPN=200A

Secondary nominal r.m.s. current

ISN

150

IPN=300A

Conversion ratio

1:2000

R. m. s voltage for AC isolation test

@50Hz, 1 min

Accuracy - Dynamic performance data

Linearity

εL

<±0.1

Accuracy

<±0.5

@ IPN , TA = 25°C

Offset current

<±0.2

@ IP = 0,TA = 25°C

Thermal drift of Io

IOT

±0.6

@ IP = 0,-10～+70°C

Response time

µS

@ 90% of IPN step

di/dt accurately followed

di/dt

A/µS

>100

Frequency bandwidth (1)

kHz

DC~100

@-3dB

General data

Ambient operating temperature

℃

-40 ~ +85

Ambient storage temperature

℃

-40 ~ +105

Secondary coil resistance

Ω

@ TA = 70°C

Notes:

Please refer to derating curves in the technical file to avoid excessive core heating at high

frequency.

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