UF5305L-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

UF5305

Preliminary

POWER MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-842.a

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250µA

-55

Breakdown Voltage Temperature

Coefficient

∆BVDSS/∆TJ Reference to 25°C, ID=-1mA

-0.034

V/°C

Drain-Source Leakage Current

IDSS

VDS=-55V, VGS=0V

-25

µA

VDS=-44V, VGS=0V, TJ=150°C

-250

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=20V, VDS=0V

100

Reverse

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-16A (Note 2)

0.06

Ω

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-2.0

-4.0

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-25V, f=1.0MHz

1200

Output Capacitance

COSS

520

Reverse Transfer Capacitance

CRSS

250

SWITCHING PARAMETERS

Total Gate Charge

ID=-16A, VDS=-44V, VGS=-10V

(Note 2)

Gate-to-Source Charge

QGS

Gate-to-Drain ("Miller") Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=-28V, ID=-16A, RG=6.8Ω

RD=1.6Ω (Note 2)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body Diode Continuous Source

Current

-31

Maximum Body-Diode Pulsed Current

(Note 1)

ISM

-110

Drain-Source Diode Forward Voltage

VSD

TJ=25°C, IS=-16A, VGS=0V

(Note 2)

-1.3

Body Diode Reverse Recovery Time

tRR

TJ=25°C, IF=-16A,

di/dt=-100A/µs (Note 2)

110

Body Diode Reverse Recovery Charge

QRR

170

250

Note: 1. Repetitive rating; pulse width limited by max. junction temperature.

2. Pulse width≤300µs; duty cycle≤2%.

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