2N60ZLG-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

2N60ZL

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-830.A

ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

Gate-Source Voltage

VGSS

±20

Avalanche Current (Note 2)

IAR

2.0

Drain Current

Continuous

2.0

Pulsed (Note 2)

IDM

8.0

Avalanche Energy

Single Pulsed (Note 3)

EAS

140

Repetitive (Note 2)

EAR

4.5

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-251/TO-252

Junction Temperature

+150

°С

Ambient Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ

3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-251/TO-252

θJA

100

°С/W

Junction to Case

TO-251/TO-252

θJc

2.87

°С/W

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