STPS30M120S datasheet(3/8 Pages) STMICROELECTRONICS

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STPS30M120S

Characteristics

Doc ID 022918 Rev 1

3/8

Figure 2.

Average forward power dissipation

versus average forward current

Figure 3.

Average forward current versus

ambient temperature (

δ = 0.5)

(W)

F(AV)

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

δ = t / T

(A)

F(AV)

100

125

150

(A)

F(AV)

Rth(j-a) = Rth(j-c)

(°C)

amb

Figure 4.

Normalized avalanche power

derating versus pulse duration

Figure 5.

Relative variation of thermal

impedance junction to case versus

pulse duration

P(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

Single pulse

t (s)

Figure 6.

Reverse leakage current versus

reverse voltage applied

(typical values)

Figure 7.

Junction capacitance versus

reverse voltage applied

(typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1020

30405060

8090

100

110

120

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

I (mA)

V (V)

100

1000

10000

100

1000

F=1MHz

Vosc =30mVRMS

Tj=25°C

C(pF)

V (V)

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