STPS30M60DJF datasheet(4/8 Pages) STMICROELECTRONICS

tên linh kiện	STPS30M60DJF

Giải thích chi tiết về linh kiện	High efficiency power Schottky diode

PDF	8 Pages

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Characteristics

STPS30M60DJF

4/8

Doc ID 023120 Rev 1

Figure 11.

Reverse safe operating area (tp < 1 µs and Tj < 150 °C)

Figure 7.

Reverse leakage current versus

reverse voltage applied

(typical values)

Figure 8.

Junction capacitance versus

reverse voltage applied

(typical values)

Figure 9.

Forward voltage drop versus

forward current

Figure 10.

Thermal resistance junction to

ambient versus copper surface

under tab

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

T = 25 °C

T = 50 °C

T = 75 °C

T = 125 °C

T = 150 °C

T = 100 °C

I (mA)

V (V)

100

1000

10000

100

F = 1 MHz

= 30 mV

T = 25 °C

osc

RMS

C(pF)

V (V)

(A)

0.1

1.0

10.0

100.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

T = 125 °C

(Maximum values)

(V)

T = 25 °C

(Maximum values)

T = 125 °C

(Typical values)

100

150

200

250

(°C/W)

th(j-a)

S (cm²)

epoxy printed board FR4,

copper thickness = 35 µm

(A)

arm

100

105

110

Varm

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