TS4962_10 datasheet(17/44 Pages) STMICROELECTRONICS

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TS4962

Electrical characteristics

Doc ID 10968 Rev 8

17/44

Table 11.

Electrical characteristics at VCC +2.4 V

with GND = 0 V, Vicm = 1.2 V, Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

ICC

Supply current

No input signal, no load

1.7

ISTBY

Standby current (1)

No input signal, VSTBY = GND

Voo

Output offset voltage

No input signal, RL = 8 Ω

3mV

Pout

Output power, G = 6 dB

THD = 1% max, f = 1 kHz, RL = 4 Ω

THD = 10% max, f = 1 kHz, RL = 4 Ω

THD = 1% max, f = 1 kHz, RL = 8 Ω

THD = 10% max, f = 1 kHz, RL = 8 Ω

0.42

0.61

0.3

0.38

THD + N

Total harmonic distortion + noise

Pout = 150 mWRMS, G = 6 dB, 20 Hz < f < 20 kHz

RL = 8 Ω + 15 µH, BW < 30 kHz

Efficiency

Pout = 0.38 WRMS, RL = 4 Ω +≥ 15 µH

Pout = 0.25 WRMS, RL = 8 Ω+≥ 15 µH

CMRR

Common mode rejection ratio

f = 217 Hz, RL = 8 Ω, G = 6 dB, ΔVic = 200 mVpp

Gain

Gain value (Rin in kΩ)V/V

RSTBY

Internal resistance from standby to GND

273

300

327

FPWM

Pulse width modulator base frequency

280

kHz

SNR

Signal to noise ratio (A-weighting)

Pout = 0.25 W, RL = 8 Ω

tWU

Wake-up time

tSTBY

Standby time

273k

Rin

-----------------

300k

-----------------

327k

-----------------

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