ACE9435B datasheet(1/5 Pages) ACE

tên linh kiện	ACE9435B

Giải thích chi tiết về linh kiện	P-Channel Enhancement Mode Field Effect Transistor

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ACE9435B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench

technology, which is especially used to minimize on-state resistance. This device is particularly suited for

low voltage application such as portable equipment, power management and other battery powered

circuits, and low in-line power loss are needed in a very small outline surface mount package.

Features

 V

DS

(V)=-320V, ID=-5.24.1A

 R

DS(ON)

=51m

Ω @ V

GS=-10V

 R

DS(ON)

=68

mΩ @ V

GS=-4.5V

 High density cell design for low R

DS(ON)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

(Note 1)

Continuous TA=25

OC

ID

-5.2

A

Pulsed

(Note 2)

-50

Total Power Dissipation

(Note 1)

PD

1.5

W

Operating and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Packaging Type

SOP-8

8

7

6

5

1

2

3

4

Số phần tương tự - ACE9435B

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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Mô tả tương tự - ACE9435B

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More results

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