IPW50R280CE datasheet(13/20 Pages) INFINEON

13 / 20 page

500V CoolMOS

TM CE

Application Note AN 2012-04

V1.0 April 2012

Figure 7: Eoss comparison 500V CE vs. standard MOSFET

The Eoss loss is in direct proportion to the output capacitance as a function of drain to source voltage of the

MOSFET. In this case the effect of a reduction of Coss is clearly visible. One further benefit out of this is a

faster VDS transition time in resonant topologies, which means that it is possible to reduce the resonant

inductance and circulating current loss, because it is possible to completely discharge the Coss with lower

currents.

Measurement Results

In order to show the impact of the mentioned technology parameters this section will describe some

measurements starting with the efficiency comparison in a CCM PFC, which is one of the most suitable

topologies to verify the new MOSFETs in hard switching.

4.1

Efficiency in CCM PFC

In this measurement the 500V CE is compared to a comparable standard MOSFET in the 280mΩ RDS(on)

range.

Setup parameters:



CCM PFC



Vin=90VAC



Vout=400VDC



Pout=0W to 400W



Frequency=100kHz



RG,ext=5Ω



Ambient temperature 25°C



Heat sink temperature preheated to 60°C



Plug and play scenario between 500V CE and standard MOSFET

100

200

300

400

500

600

VDS [V]

IPP50R500CE vs. Standard MOS

EOSS comparison of 500mOhm devices

IPP50R500CE

standard MOS

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