http://www.belling.com.cn

3/28/2007

Page 2/6

BLV740

N-channel Enhancement Mode Power MOSFET

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BV

DSS

Drain-Source Breakdown Voltage

V

400

-

-

V

∆BV

DSS

/

∆T

J

Breakdown Voltage

Temperature Coefficient

Reference to 25℃,

I

-

0.49

-

V/℃

R

DS(ON)

Static Drain-Source On-Resistance

V

-

-

0.55

Ω

V

GS(th)

Gate Threshold Voltage

V

2

-

4

V

g

fs

Forward Transconductance(note3)

V

5.8

-

-

S

I

DSS

Drain-Source Leakage Current

V

-

-

1

uA

Drain-Source Leakage Current

Tc=125℃

V

-

-

250

uA

I

GSS

Gate-Source Leakage Current

V

-

-

±100

nA

Qg

Total Gate Charge

-

-

63

nC

Qgs

Gate-Source Charge

-

-

9

nC

Qgd

Gate-Drain Charge

note3

-

-

32

nC

Turn-on Delay Time

-

14

-

ns

Turn-on Rise Time

-

27

-

ns

Turn-off Delay Time

-

50

-

ns

Turn-off Fall Time

Ω

note3

-

24

-

ns

Ciss

Input Capacitance

-

1400

-

pF

Coss

Output Capacitance

-

330

-

pF

Crss

Reverse Transfer Capacitance

f = 1MHz

-

120

-

pF

Source-Drain Diode Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

I

S

Continuous Source Diode Forward Current

-

-

10

A

I

SM

Pulsed Source Diode Forward Current (note1)

-

-

40

A

V

SD

Forward On Voltage

-

-

2.0

V

Reverse Recovery Time

-

370

790

ns

Reverse Recovery Charge

-

3.8

8.2

uC

注：

(1) Repetitive Rating: Pulse width limited by maximum junction temperature

Ω，staring Tj=25C

(3) Pulse width

≤ 300 us; duty cycle ≤ 2%