MCP2021 datasheet(28/52 Pages) MICROCHIP

28 / 52 page

MCP2021/2/1P/2P

DS22018F-page 28

2.4

Thermal Specifications

Voltage Regulator

Bus Activity Debounce Time

tBDB

µs

Bus debounce time

Bus Activity to Voltage

Regulator Enabled

tBACTVE

100

250

500

µs

After bus debounce time

Voltage Regulator Enabled

to Ready

tVEVR

—

1200

µs

(Note 1)

Chip Select to Operation

Ready

tCSOR

—

500

µs

(Note 1)

Chip Select to Power-Down

tCSPD

——

µs

Short-Circuit to Shut-Down

tSHUTDOWN

—

100

µs

RESET Timing

VREG OK Detect to RESET

Inactive

tRPU

——

10.0

µs

VREG OK Detect to RESET

Active

tRPD

——

10.0

µs

Note 1:

Time depends on external capacitance and load.

THERMAL CHARACTERISTICS

Parameter

Symbol

Typ

Max

Units

Test Conditions

Recovery Temperature

θRECOVERY

+140

—

°C

Shutdown Temperature

θSHUTDOWN

+150

—

°C

Short Circuit Recovery Time

tTHERM

1.5

5.0

Thermal Package Resistances

Thermal Resistance, 8L-DFN

θJA

35.7

—

°C/W

Thermal Resistance, 8L-PDIP

θJA

89.3

—

°C/W

Thermal Resistance, 8L-SOIC

θJA

149.5

—

°C/W

Thermal Resistance, 14L-PDIP

θJA

—

°C/W

Thermal Resistance, 14L-SOIC

θJA

95.3

—

°C/W

Thermal Resistance, 14L-TSSOP

θJA

100

—

°C/W

Note 1:

The maximum power dissipation is a function of TJMAX,

ΘJA and ambient temperature T

A. The maximum

allowable power dissipation at an ambient temperature is PD = (TJMAX - TA)

ΘJA. If this dissipation is

exceeded, the die temperature will rise above 150

°C and the MCP2021 will go into thermal shutdown.

2.3

AC Specification (Continued)

AC CHARACTERISTICS

VBB = 6.0V to 18.0V; TA = -40°C to +125°C

Parameter

Sym

Min.

Typ.

Max.

Units

Test Conditions

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