STP6621 datasheet(1/6 Pages) STANSON

tên linh kiện	STP6621

Giải thích chi tiết về linh kiện	STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

PDF	6 Pages

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nhà sản xuất	STANSON [Stanson Technology]

Trang chủ	http://www.stansontech.com

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STP6621

P Channel Enhancement Mode MOSFET

-18.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

.

STP6621 2010. V1

SCRIPTION

STP6621 is the P-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application, noteook power management ane ther

battery powered circuits where high-side witching.

PIN CONFIGURATION

SOP-8

PART MARKING

SOP-8

FEATURE

-60V/-10.0A, RDS(ON) = 23m

(Typ.)

@VGS =-10V

-60V/-8.0A, RDS(ON) = 28m

@VGS = -4.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOP-8 package design

Số phần tương tự - STP6621

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Stanson Technology	STP6623	456Kb / 6P	P Channel Enhancement Mode MOSFET
Stanson Technology	STP6625	813Kb / 7P	P Channel Enhancement Mode MOSFET

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Mô tả tương tự - STP6621

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Stanson Technology	ST2315SRG	218Kb / 6P	ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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	ST3401SRG	212Kb / 6P	ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
	ST3407SRG	184Kb / 6P	ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4435A	311Kb / 6P	STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4803	697Kb / 7P	STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP7401	461Kb / 6P	STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP9437	375Kb / 6P	STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP9527	927Kb / 7P	STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Shenzhen Huazhimei Semi...	HM1P10MR	763Kb / 5P	P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STP6621 bảng dữ liệu(PDF) 1 Page - Stanson Technology

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Số phần tương tự - STP6621

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