STN4438 datasheet(1/6 Pages) STANSON

tên linh kiện	STN4438

Giải thích chi tiết về linh kiện	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

PDF	6 Pages

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nhà sản xuất	STANSON [Stanson Technology]

Trang chủ	http://www.stansontech.com

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STN4438

N Channel Enhancement Mode MOSFET

8.2A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

Copyright

STN4438 2009. V1

DESCRIPTION

STN4438 is the N-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as power management and other

battery powered circuits where high-side switching.

PIN CONFIGURATION

SOP-8

PART MARKING

Y: Year Code A: Process Code

FEATURE

l

60V/8.2A, RDS(ON) = 25mΩ (Typ.)

@VGS = 10V

l

60V/7.6A, RDS(ON) = 30mΩ

@VGS = 4.5V

l

Super high density cell design for

extremely low RDS(ON)

l

Exceptional on-resistance and maximum

DC current capability

l

SOP-8 package design

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Số phần tương tự - STN4438

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
VBsemi Electronics Co.,...	STN4438	995Kb / 9P	N-Channel 60-V (D-S) MOSFET
EVER SEMICONDUCTOR CO.,...	STN4438	891Kb / 6P	8.2A N Channel Enhancement Mode MOSFET Rev:2023A2

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Mô tả tương tự - STN4438

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Stanson Technology	ST2304SRG	630Kb / 6P	ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3406SRG	325Kb / 6P	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN1810	966Kb / 7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4346	352Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4416	966Kb / 6P	STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4426	362Kb / 6P	STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb / 6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4546	363Kb / 6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb / 6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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