MGSF1N03LT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µAdc)

V(BR)DSS

30

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 24 Vdc, VGS = 0 Vdc)

(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

—

—

±100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

1.0

1.7

2.4

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 1.2 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

rDS(on)

—

—

0.08

0.125

0.09

0.135

Ohms

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 5.0 Vdc)

Ciss

—

100

—

pF

Output Capacitance

(VDS = 5.0 Vdc)

Coss

—

90

—

Transfer Capacitance

(VDG = 5.0 Vdc)

Crss

—

40

—

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 Ω)

td(on)

—

2.5

—

ns

Rise Time

(VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 Ω)

tr

—

1.0

—

Turn–Off Delay Time

(VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 Ω)

td(off)

—

16

—

Fall Time

tf

—

8.0

—

Gate Charge (See Figure 6)

QT

—

6000

—

pC

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

IS

—

—

0.6

A

Pulsed Current

ISM

—

—

0.75

Forward Voltage(2)

VSD

—

0.8

—

V

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Transfer Characteristics

Figure 2. On–Region Characteristics

0

1.5

2

0.5

1

1

1.5

2

2.5

3

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

VDS = 10 V

TJ = 150°C

25

°C

– 55

°C

3.5

2.5

0

2

4

10

0

1.5

2

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

6

0.5

8

1

2.5

3.25 V

2.75 V

VGS = 3.75 V

2.5 V

3.0 V

3.5 V