SC9301

3

LX to PGND (V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +30

LX to PGND (V) (transient — 100ns max.) . . . . . . -2 to +30

DH, BST to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +35

DH, BST to LX (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6

DL to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6

VIN to PGND (V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +30

EN, FB, ILIM, PGOOD to AGND (V) . . . . . . -0.3 to +(VDD + 0.3)

SS, VLDO, VOUT to AGND (V) . . . . . . . . . -0.3 to +(VDD + 0.3)

TON to AGND (V). . . . . . . . . . . . . . . . . . . . . -0.3 to +(VDD -1.5)

ENL to AGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to VIN

VDD to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 to +6

AGND to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3 to +0.3

Recommended Operating Conditions

Input Voltage (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 to 28

VDD to PGND (V) .. . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 to 5.5

VOUT to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 to 5.5

Thermal Information

Storage Temperature (°C). . . . . . . . . . . . . . . . . . . . -60 to +150

Maximum Junction Temperature (°C) . . . . . . . . . . . . . . . . 150

Operating Junction Temperature (°C) . . . . . . . . -40 to +125

High-side MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Low-side MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

PWM controller and LDO thermal resistance . . . . . 50

Peak IR Reflow Temperature (°C) . . . . . . . . . . . . . . . . . . . . 260

Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters

specified in the Electrical Characteristics section is not recommended.

NOTES:

(1)

Tested according to JEDEC standard JESD22-A114.

(2) Calculated from package in still air, mounted to 3 x 4.5 (in), 4 layer FR4 PCB with thermal vias under the exposed pad per JESD51 standards.

Unless specified: V

IN

=12V, VDD = 5V, T

A

= +25°C for Typ, -40 to +85 °C for Min and Max, T

J

< 125°C, Typical Application Circuit

Electrical Characteristics

Parameter

Conditions

Min

Typ

Max

Units

Input Supplies

Input Supply Voltage

V

IN

> VDD

3

28

V

VDD Voltage

3

5.5

V

Sensed at ENL pin, rising edge

1.47

1.57

1.77

V

Sensed at ENL pin, falling edge

1.15

1.35

VIN UVLO Hysteresis

Sensed at ENL pin; EN = 5V

0.3

V

VDD UVLO Threshold

Measured at VDD pin, rising edge

2.5

3.0

V

Measured at VDD pin, falling edge

2.4

2.9

VDD UVLO Hysteresis

0.18

V

VIN Supply Current

Shutdown mode; ENL , EN = 0V

8.5

20

μA

Standby mode; ENL = VDD, EN = 0V

130