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STM32F051C8 bảng dữ liệu(PDF) 62 Page - STMicroelectronics |
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STM32F051C8 bảng dữ liệu(HTML) 62 Page - STMicroelectronics |
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62 / 104 page ![]() STM32F051x Electrical characteristics Doc ID 022265 Rev 3 63/105 High-speed internal 14 MHz (HSI14) RC oscillator (dedicated to ADC) Low-speed internal (LSI) RC oscillator Wakeup time from low-power mode The wakeup times given in Table 41 is measured on a wakeup phase with a 8-MHz HSI RC oscillator. The event used to wake up the device depends from the current operating mode: ● Stop or sleep mode: the wakeup event is WFE ● The wakeup pin used in stop and sleep mode is PA0 and in standby mode is the PA1. All timings are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 20. Table 39. HSI14 oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI14 Frequency - 14 MHz TRIM HSI14 user-trimming step - - 1(2) 2. Guaranteed by design, not tested in production. % DuCy(HSI14) Duty cycle 45(2) -55(2) % ACCHSI14 Accuracy of the HSI14 oscillator (factory calibrated) TA = –40 to 105 °C –4.2 (3) 3. Data based on characterization results, not tested in production. -5.1(3) % TA = –10 to 85 °C –3.2(3) -3.1(3) % TA = 0 to 70 °C –1.3(3) -2.2(3) % TA = 25 °C –1 - 1 % tsu(HSI14) HSI14 oscillator startup time 1(2) -2(2) µs IDD(HSI14) HSI14 oscillator power consumption -100 150(2) µA Table 40. LSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI Frequency 30 40 50 kHz tsu(LSI) (2) 2. Guaranteed by design, not tested in production. LSI oscillator startup time - - 85 µs IDD(LSI) (2) LSI oscillator power consumption - 0.75 1.2 µA |
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