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TLE2021MDREP bảng dữ liệu(PDF) 1 Page - Texas Instruments

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tên linh kiện TLE2021MDREP
Giải thích chi tiết về linh kiện  EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS
PDF  45 Pages
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Trang chủ  http://www.ti.com
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TLE2021MDREP bảng dữ liệu(HTML) 1 Page - Texas Instruments

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TLE202x-EP, TLE202xA-EP
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
SGLS235D− FEBRUARY 2004 − REVISED SEPTEMBER 2010
1
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
D Controlled Baseline
− One Assembly/Test Site, One Fabrication
Site
D Extended Temperature Performance of
−40°C to 125°C
D Also Available in −55°C to 125°C
D Enhanced Diminishing Manufacturing
Sources (DMS) Support
D Enhanced Product-Change Notification
D Qualification Pedigree†
D Supply Current . . . 300 μA Max
† Component qualification in accordance with JEDEC and industry
standards to ensure reliable operation over an extended
temperature range. This includes, but is not limited to, Highly
Accelerated Stress Test (HAST) or biased 85/85, temperature
cycle, autoclave or unbiased HAST, electromigration, bond
intermetallic life, and mold compound life. Such qualification
testing should not be viewed as justifying use of this component
beyond specified performance and environmental limits.
D High Unity-Gain Bandwidth...2 MHz Typ
D High Slew Rate . . . 0.45 V/μs Min
D Supply-Current Change Over Full Temp
Range ...10 μA Typ at VCC ± = ± 15 V
D Specified for Both 5-V Single-Supply and
±15-V Operation
D Phase-Reversal Protection
D High Open-Loop Gain... 6.5 V/μV
(136 dB) Typ
D Low Offset Voltage . . . 100 μV Max
D Offset Voltage Drift With Time
0.005 μV/mo Typ
D Low Input Bias Current . . . 50 nA Max
D Low Noise Voltage . . . 19 nV/√Hz Typ
description
The TLE202x and TLE202xA devices are precision, high-speed, low-power operational amplifiers using a new
Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly
improved slew rate and unity-gain bandwidth.
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic
improvement in unity-gain bandwidth and slew rate over similar devices.
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both
time and temperature. This means that a precision device remains a precision device even with changes in
temperature and over years of use.
This combination of excellent dc performance with a common-mode input voltage range that includes the
negative rail makes these devices the ideal choice for low-level signal conditioning applications in either
single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry
that eliminates an unexpected change in output states when one of the inputs goes below the negative supply
rail.
A variety of options are available in small-outline packaging for high-density systems applications.
The Q-suffix devices are characterized for operation over the full automotive temperature range of −40°C to
125°C.
Copyright © 2007 Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.


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