STPS20M60C datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STPS20M60C

4/10

Doc ID 022057 Rev 1

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 7.

Relative thermal impedance

junction to case versus pulse

duration

100

120

140

160

180

200

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

δ = 0.5

T = 25 °C

T = 75 °C

T = 125 °C

t(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

Single pulse

t (s)

Figure 8.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

2030

4050

I (mA)

V (V)

T = 25 °C

T = 50 °C

T = 75 °C

T = 125 °C

T = 150 °C

T = 100 °C

100

1000

10000

100

C(pF)

F = 1 MHz

= 30 mV

T = 25 °C

osc

RMS

V (V)

Figure 10.

Forward voltage drop versus

forward current (per diode)

Figure 11.

Thermal resistance junction to

ambient versus copper surface

under tab

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

(A)

(V)

(Maximum values)

T = 125 °C

(Typical values)

T = 125 °C

(Maximum values)

T = 25 °C

DPAK

(°C/W)

th(j-a)

S (cm )

epoxy printed board copper thickness = 35 µm

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