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2.1

Electrical Specification

2.2

Mechanical Wafer Specification

Electrical Specification

Table 2-1. Absolute Maximum Ratings

Parameter

Symbol

Note

Min

Nom

Max

Unit

Antenna Input Current

Iant_dc

10

mA

Antenna Input Voltage

Vant_dc

10

V

Storage Temperature

Ts

-40

125

°C

Junction (Chip) Temp.

Tj

150

°C

ANT1, ANT2,

HBM

2.5

ESD Immunity

kV

TDAT, GND

2.0

Note:

Stress beyond the limits of those listed under ‘Absolute Maximum Ratings’ cause permanent

damage to the device. Functional operation of the device under these or any other conditions

beyond those indicated under ‘Recommended Operating Conditions’ is not implied. Exposure

to absolute-maximum-rated conditions for extended time affect device reliability.

Table 2-2. Recommended Operating Conditions

Parameter

Symbol

Note

Min

Nom

Max

Unit

Operating temperature

TA

–40

85

°C

Carrier frequency

fTX

13.56

MHz

Antenna input voltage

VANT

@ fTX unmodulated

2.5

Vlim

V

Impedance of LC circuit

Z

6.5

15.5

k

Ω

Table 2-3. Electrical Characteristics

Parameter

Symbol

Note

Min

Nom

Max

Unit

Input capacitance

–10%

23.5

10%

pF

Operating supply current

ICC

VANT=min

25

μA

Programming

35

Uplink modulation index

VANT<7V

0.1

0.3

Limiter clamping voltage

Vlim

10

V

Data retention

tDRET

55C

10

Years

Write and erase endurance

W&E

Ta=25C

100 000

Cycles

Note:

For highest possible read-out coverage we recommend to operate readers at a modulation

depth of 20% or higher.

Table 2-4. General Mechanical Wafer Specification

Parameter

Value

Wafer diameter

200 mm

±0.3 mm (8 inch)

Thickness

711

μm

Scribe line width

84

μm

Electrical connection of substrate

VSS potential

Complete dies per wafer

24172

Specification

12

SCBU045 (11-09-21-065) – October 2007

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