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FR4 bảng dữ liệu(PDF) 3 Page - Freescale Semiconductor, Inc |
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FR4 bảng dữ liệu(HTML) 3 Page - Freescale Semiconductor, Inc |
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3 / 21 page ![]() AFT09MS031NR1 AFT09MS031GNR1 3 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Dynamic Characteristics Reverse Transfer Capacitance (VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc) Crss — 2.1 — pF Output Capacitance (VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc) Coss — 63 — pF Input Capacitance (VDS = 13.6 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 140 — pF Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ = 500 mA, Pout = 31W,f= 870 MHz Common--Source Amplifier Power Gain Gps 16.0 17.2 18.5 dB Drain Efficiency ηD 68.0 71.0 — % Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, IDQ = 500 mA) Frequency (MHz) Signal Type VSWR Pout (W) Test Voltage, VDD Result 870 CW >65:1 at all Phase Angles 54 (3 dB Overdrive) 17 No Device Degradation 1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. |
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