REF3140-DIE

SBVS205 – JUNE 2012

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

BARE DIE INFORMATION

BACKSIDE

BOND PAD

BOND PAD

DIE THICKNESS

BACKSIDE FINISH

POTENTIAL

METALLIZATION COMPOSITION

THICKNESS

15 mils.

Silicon with backgrind

Floating

Ti/AlSiCu/TiN

800 nm

DESCRIPTION

PAD NUMBER

X MIN

Y MIN

X MAX

Y MAX

OUT

1

5

5

107

107

OUT

2

198.6

5

300.6

107

GND

3

396.2

5

498.2

107

GND

4

585.8

5

687.8

107

N/C

5

585.8

1246.2

687.8

1348.2

IN

6

251.15

1246.2

441.65

1348.2

N/C

7

5

1246.2

107

1348.2

(1)

Substrate N/C.

2

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