55PT06AI datasheet(1/5 Pages) NELLSEMI

tên linh kiện	55PT06AI

Giải thích chi tiết về linh kiện	Stansard SCRs, 55A

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SEMICONDUCTOR

55PT Series RoHS

RoHS

Stansard SCRs, 55A

Main Features

Symbol

Value

Unit

IT(RMS)

V

/V

DRM

RRM

IGT

55

A

V

mA

80

600 to 1600

DESCRIPTION

www.nellsemi.com

The 55PT series of silicon controlled rectifiers are

high performance glass passivated technology,

and are suitable for general purpose applications,

where power handling and power dissipation are

critical, such as solid state relay, welding equipment

SYMBOL

IT(RMS)

RMS on-state current full sine wave

ITSM

Non repetitive surge peak on-state

current (full cycle, T initial = 25°C)

j

A

I t

2

I t Value for fusing

1352

2

A s

dI/dt

Critical rate of rise of on-state current

150

IGM

Peak gate current

PG(AV)

Average gate power dissipation

Tstg

Storage temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

ºC

A/µs

A

W

UNIT

VALUE

520

F =50 Hz

F =60 Hz

t = 20 ms

t = 16.7 ms

t = 10 ms

p

F = 60 Hz

T =125ºC

j

T = 125ºC

j

T = 125ºC

j

T = 20 µs

p

Tj

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITIONS

V

600 to 1600

T =125ºC

j

VDRM

VRRM

Repetitive peak off-state voltage

Repetitive peak reverse voltage

(180° conduction angle )

5

2

Average on-state current

(180° conduction angle)

IT(AV)

35

A

TO-3P/TO-247AB

TO-220AB/TO-263

T =85°C

c

T =80°C

c

Maximum gate power

PGM

W

10

T =20µs

p

T = 125ºC

j

TO-220AB insulated/TO-3P insulated

T =85°C

c

T =80°C

c

55

540

Base on a clip assembly technology, they offer a

superior performance in surge current capabilities.

TO-3P/TO-247AB

TO-220AB/TO-263

TO-220AB insulated/TO-3P insulated

Maximum peak reverse gate voltage

VRGM

5

V

T =70°C

c

T =70°C

c

TO-220AB non-Insulated)

(

TO-3P (non-Insulated)

A2

G

A1

2

TO-263 (D PAK)

A1 A2 G

A2

(55PTxxH)

(55PTxxA)

(55PTxxB)

1

2

3

TO-220AB (lnsulated)

TO-3P (Insulated)

A1 A2 G

(55PTxxAI)

(55PTxxBI)

TO-247AB (non-Insulated)

(55PTxxC)

and high power motor control.

(G)3

1(A1)

(A2)

2

1

2

3

Thanks to their internal ceramic pad, they provide

high voltage insulation(2500V

).

RMS

V = 67% V

, t = 200μs, I = 0.3A

D

DRM

p

G

d /dt = 0.3A/μs

IG

Số phần tương tự - 55PT06AI

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Nell Semiconductor Co.,...	55PT	650Kb / 5P	Stansard SCRs
	55PTxxA	652Kb / 5P	Stansard SCRs, 55A
	55PTxxAI	652Kb / 5P	Stansard SCRs, 55A
	55PTxxB	652Kb / 5P	Stansard SCRs, 55A
	55PTxxBI	652Kb / 5P	Stansard SCRs, 55A

More results

Mô tả tương tự - 55PT06AI

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Nell Semiconductor Co.,...	16PT06AI	661Kb / 6P	Stansard SCRs, 16A
	55PT	652Kb / 5P	Stansard SCRs, 55A
	40PT	659Kb / 5P	Stansard SCRs
	55PT	650Kb / 5P	Stansard SCRs
	70PT	254Kb / 4P	Stansard SCRs
	16PT	784Kb / 6P	Stansard SCRs
	25PT	856Kb / 6P	Stansard SCRs
	40PT	751Kb / 5P	Stansard SCRs
	75PT	708Kb / 5P	Stansard SCRs
	30PT	245Kb / 6P	Stansard SCRs

More results

55PT06AI bảng dữ liệu(PDF) 1 Page - Nell Semiconductor Co., Ltd

55PT06AI bảng dữ liệu(HTML) 1 Page - Nell Semiconductor Co., Ltd

Số phần tương tự - 55PT06AI

Mô tả tương tự - 55PT06AI

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