RB520S-30 datasheet(1/4 Pages) COMCHIP

tên linh kiện	RB520S-30

Giải thích chi tiết về linh kiện	SMD Schottky Barrier Diodes

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nhà sản xuất	COMCHIP [Comchip Technology]

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Io = 200 mA

VR = 30 Volts

RB520S-30

Page 1

QW-BB023

REV:B

A

mA

V

1

200

30

IO

VR

IFSM

8.3ms single half sine-wave superimposed

on rate load(JEDEC method)

OC

+125

-40

TSTG

Tj

Storage temperature

Junction temperature

Mean rectkfying current

DCReverse voltage

Peak forward surge current

Parameter

Conditions

Symbol Min Typ Max Unit

µA

V

1

0.6

IR

VF

Reverse current

Forward voltage

Parameter

Conditions

Symbol Min Typ Max Unit

VR = 10 V

IF = 200 mA

Maximum Ratings (at TA=25°C unless otherwise noted)

Electrical Characteristics (At Ta=25°C, unless otherwise noted)

Comchip Technology CO., LTD.

Dimensions in inches and (millimeter)

SOD-523

0.014(0.35)

0.010(0.25)

0.051(1.30)

0.043(1.10)

0.033(0.85)

0.030(0.75)

0.067(1.70)

0.059(1.50)

0.008(0.20)

REF

0.006(0.15)

0.003(0.08)

0.031(0.77)

0.020(0.51)

0.003(0.07)

0.001(0.01)

+

-

Features

Low reverse current.

Designed for mounting on small surface.

Extremely thin package.

Majority carrier conduction.

Mechanical data

Case: SOD-523 standard package,

molded plastic.

Terminals: solderable per MIL-STD-750

,method 2026.

Marking code: cathode band & B

Mounting position: Any

Weight: 0.0012 gram(approx.).

Circuit Diagram

RoHS Device

SMD Schottky Barrier Diodes

Số phần tương tự - RB520S-30

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Rohm	RB520S-30	676Kb / 4P	Schottky barrier diode
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Mô tả tương tự - RB520S-30

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RB520S-30 bảng dữ liệu(PDF) 1 Page - Comchip Technology

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Số phần tương tự - RB520S-30

Mô tả tương tự - RB520S-30

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