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MBR20150CT-G bảng dữ liệu(PDF) 1 Page - Comchip Technology

tên linh kiện MBR20150CT-G
Giải thích chi tiết về linh kiện  SMD Schottky Barrier Rectifiers
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nhà sản xuất  COMCHIP [Comchip Technology]
Trang chủ  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

MBR20150CT-G bảng dữ liệu(HTML) 1 Page - Comchip Technology

  MBR20150CT-G Datasheet HTML 1Page - Comchip Technology MBR20150CT-G Datasheet HTML 2Page - Comchip Technology MBR20150CT-G Datasheet HTML 3Page - Comchip Technology  
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Page 1
REV:B
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
NOTES:
1. 300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Voltage: 30 to 150 V
Current: 20.0 A
RoHS Device
MBR2030CT-G Thru. MBR20150CT-G
Dimensions in inches and (millimeter)
TO-220AB
Comchip Technology CO., LTD.
(3.20)
0.126
0.055(1.40)
0.047(1.20)
0.148(3.80)
0.187(4.70)
0.531(13.50)
0.583(14.80)
0.610(15.50)
0.583(14.80)
0.157
(4.0)
0.230(5.80)
0.270(6.90)
0.108
(2.75)
0.153(3.90)
0.146(3.70)
0.347( 9.50)
0.413(10.50)
0.024(0.60)
0.012(0.30)
0.051(1.30)
0.043(1.10)
0.032(0.80)
0.102(2.60)
0.091(2.30)
MAX
Parameter
Symbol
Unit
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current ( See Fig.1 )
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load(JEDEC Method)
Operating Temperature Range
Storage Temperature Range
30
21
30
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
TJ
TSTG
150
0.10
-55 to +150
-55 to +175
V
V
V
A
A
V
mA
40
28
40
50
35
50
60
42
60
80
56
80
100
70
100
150
105
150
20.0
Maximum DC Reverse Current
at Rate DC Blocking Voltage
MBR
2030CT-G
MBR
2040CT-G
MBR
2050CT-G
MBR
2060CT-G
MBR
2080CT-G
MBR
20100CT-G
MBR
20150CT-G
Peak Forward Voltage
(Note 1)
IF=10A@ TJ= 25°C
IF=10A@ TJ=125°C
IF=20A@ TJ= 25°C
IF=20A@ TJ=125°C
-
0.57
0.84
0.72
0.80
0.70
0.95
0.85
0.85
0.75
0.95
0.85
0.95
0.85
1.05
0.95
@ TJ= 25°C
@ TJ= 125°C
0.10
15.0
10.0
0.10
7.50
0.10
5.00
Typical Junction Capacitance (Note2)
CJ
400
320
pF
Typical Thermal Resistance (Note3)
RθJC
1.50
°C/W
3.50
°C
°C
3. Thermal resistance junction to case.
SMD Schottky Barrier Rectifiers
Features
-Metal of silicon rectifier, majority carrier conduction.
Mechanical Data
-Guard ring for transient protection.
-Low power loss, high efficiency.
-Epoxy: UL 94-V0 rate flame retardant.
-Mounting position: Any
-Case: TO-220AB, molded plastic
-Weight: 2.24 grams
-
low VF.
High current capability,
-High surge capacity.
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
-Polarity: As marked on the body.
Comchip
S M D D i o d e S p e c i a l i s t


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