Z0107MATSLASHR-ND datasheet(7/14 Pages) NXP

7 / 14 page

Z0107MA

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 04 — 21 March 2011

7 of 14

NXP Semiconductors

Z0107MA

4Q Triac

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IGT

gate trigger current

VD =12V; IT = 0.1 A; T2+ G+; Tj =25°C;

see Figure 7

--5

VD =12V; IT = 0.1 A; T2+ G-; Tj =25°C;

see Figure 7

--5

VD =12V; IT = 0.1 A; T2- G-; Tj =25°C;

see Figure 7

--5

VD =12V; IT = 0.1 A; T2- G+; Tj =25°C;

see Figure 7

--7

latching current

VD =12V; IG = 0.1 A; T2+ G+; Tj =25 °C;

see Figure 8

--10

VD =12V; IG = 0.1 A; T2+ G-; Tj =25°C;

see Figure 8

--20

VD =12V; IG = 0.1 A; T2- G-; Tj =25°C;

see Figure 8

--10

VD =12V; IG = 0.1 A; T2- G+; Tj =25°C;

see Figure 8

--10

holding current

VD =12V; Tj =25°C; see Figure 9

--10

on-state voltage

IT =1A; Tj =25°C; see Figure 10

-1.3

1.6

VGT

gate trigger voltage

VD =12V; IT = 0.1 A; Tj =25°C;

see Figure 11

--1.3

VD = 600 V; IT =0.1 A; Tj =125 °C;

see Figure 11

0.2

--V

off-state current

VD = 600 V; Tj = 125 °C

--0.5

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM =402 V; Tj = 110 °C; exponential

waveform; gate open circuit;

see Figure 12

--V/µs

dVcom/dt

rate of change of

commutating voltage

VD = 400 V; Tj =110 °C;

dIcom/dt = 0.44 A/ms; IT = 1 A; gate open

circuit

--V/µs

Z0107MAT/R-ND bảng dữ liệu(PDF) 7 Page - NXP Semiconductors

Z0107MAT/R-ND bảng dữ liệu(HTML) 7 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

bảng dữ liệu tải về

Link URL