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CEFM102-G bảng dữ liệu(PDF) 1 Page - Comchip Technology

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CEFM102-G bảng dữ liệu(HTML) 1 Page - Comchip Technology

  CEFM102-G Datasheet HTML 1Page - Comchip Technology CEFM102-G Datasheet HTML 2Page - Comchip Technology CEFM102-G Datasheet HTML 3Page - Comchip Technology CEFM102-G Datasheet HTML 4Page - Comchip Technology  
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Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Unit
Repetitive peak reverse voltage
Continuous reverse voltage
RMS Voltage
MAX. Forward surge current
MAX. Forward voltage at IF=1.0A
MAX. Forward surge current, 8.3ms
single half sine-wave superimposed on
rated load (JEDEC method)
MAX. Reverse recovery time, (Note 1)
VR=VRR TJ=25°C
Operating junction temperature
Storage temperature range
Reverse Voltage: 50 to 600 Volts
Forward Current: 1.0 Amp
RoHS Device
Dimensions in inches and (millimeter)
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Super fast recovery time for high efficient.
-Built-in strain relief.
-Low forward voltage drop.
Mechanical data
-Case: Molded plastic, JEDEC SOD-123/Mini SMA.
-Terminals: Solderable per MIL-STD-750, method
2026.
-Polarity: Indicated by cathode band.
-Weight: 0.018 grams approx.
CEFM101-G Thru. CEFM105-G
Page 1
QW-BE007
SMD Efficient Fast Recovery Rectifiers
REV:C
Comchip Technology CO., LTD.
SOD-123 / Mini SMA
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
0.075(1.9)
0.060(1.5)
0.067(1.7)
0.051(1.3)
0.028(0.7) Typ.
0.028(0.7) Typ.
VRRM
VR
VRMS
IO
VF
IFSM
Trr
IR
TJ
TSTG
CJ
CEFM
101-G
CEFM
102-G
CEFM
103-G
CEFM
104-G
CEFM
105-G
50
50
35
100
100
70
200
200
140
1.0
25
5.0
100
15
-55 to +150
-65 to +175
400
400
280
600
600
420
V
V
V
A
V
A
nS
μA
P
F
°C
°C
0.875
1.75
Note 1: Reverse recovery time test Condition, IF=0.5A , IR=1.0A , IRR=0.25A
1.25
25
VR=VRR TJ=125°C
MAX. Reverse current
TYP. Diode junction capacitance
(f=1MHz and applied 4V DC reverse voltage)


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