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TIP112G-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện TIP112G-TN3-R
Giải thích chi tiết về linh kiện  NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
PDF  4 Pages
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nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
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TIP112G-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

  TIP112G-TN3-R Datasheet HTML 1Page - Unisonic Technologies TIP112G-TN3-R Datasheet HTML 2Page - Unisonic Technologies TIP112G-TN3-R Datasheet HTML 3Page - Unisonic Technologies TIP112G-TN3-R Datasheet HTML 4Page - Unisonic Technologies  
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TIP112
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-022.D
ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
DC
IC
2
A
Peak
ICM
4
Base Current (DC)
IB
50
mA
Collector Dissipation
TO-126
PC
10
W
TO-220
40
TO-252
15
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
VCEO(SUS) IC=30mA, IB=0A
100
V
Collector-Emitter Saturation Voltage
VCE(SAT) IC=2A, IB=8mA
2.5
V
Base-Emitter Turn-On Voltage
VBE(ON)
VCE=4V, IC=2A
2.8
Collector-Base Cut-Off Current
ICBO
VCB=100V, IE=0A
1
mA
Collector-Emitter Cut-Off Current
ICEO
VCE=50V, VB=0A
2
mA
Emitter-Base Cut-Off Current
IEBO
VEB=5V, IC=0A
2
mA
DC Current Gain
hFE
VCE=4V, IC=1A
1000
VCE=4V, IC=2A
500
Collector Capacitance
COB
VCB=10V, IE=0A, f=0.1MHz
100
pF



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