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UTT25N08L-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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Giải thích chi tiết về linh kiện  25A, 80V N-CHANNEL POWER MOSFET
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UTT25N08
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-749.a
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
80
V
Gate-Source Voltage
VGSS
±25
V
Drain Current
Continuous
ID
25
A
Pulsed
IDM
100
A
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
100
°C/W
Junction to Case
θJC
2.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
80
V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
1
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+25V, VDS=0V
+100
nA
Reverse
VGS=-25V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=25A
120
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
600 780
pF
Output Capacitance
COSS
165 215
pF
Reverse Transfer Capacitance
CRSS
32
40
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=80V, ID=25A
(Note 1, 2)
19
25
nC
Gate to Source Charge
QGS
3.9
nC
Gate to Drain Charge
QGD
9.0
nC
Turn-ON Delay Time
tD(ON)
VDD=50V, ID=25A, RL=50Ω,
VGS=10V, RG=25Ω (Note 1, 2)
7.5
25
ns
Rise Time
tR
150 310
ns
Turn-OFF Delay Time
tD(OFF)
20
50
ns
Fall-Time
tF
65
140
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
25
A
Maximum Body-Diode Pulsed Current
ISM
100
A
Drain-Source Diode Forward Voltage
VSD
IS=25A, VGS=0V
1.5
V
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature



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