UTT16P10L-TN3-R datasheet(2/4 Pages) UTC

2 / 4 page

UTT16P10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-748.a

ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-100

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous,

VGSS@-10V

TC=25°C

-16

TC=100°C

-9.8

Pulsed (Note 2)

IDM

-64

Avalanche Current (Note 2)

IAR

-16

Avalanche Energy

Repetitive (Note 3)

EAS

345

Single Pulsed (Note 2)

EAR

Peak Diode Recovery dv/dt

dv/dt

-5.5

V/ns

Power Dissipation (TC=25°C)

150

Junction Temperature

-55~+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive rating; pulse width limited by max. junction temperature.

3. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-16A.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

θJC

1.0

°C/W

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VGS=0V

-100

Breakdown Voltage Temperature Coefficient

∆BVDSS/∆TJ Reference to 25°C, ID=-1mA

-0.1

V/°C

Drain-Source Leakage Current

IDSS

VDS=-100V, VGS=0V,

-25

µA

VDS=-80V, VGS=0V, TJ=150°C

-100

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+20V

+100 nA

Reverse

VGS=-20V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1.0

-3.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-16A (Note 2)

0.21

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=-25V, VGS=0V, f=1.0MHz

1180 1900

Output Capacitance

COSS

250

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

VDS=-80V, VGS=-10V, ID=-16A,

Gate to Source Charge

QGS

Gate to Drain ("Miller") Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=-50V, ID=-16A, RG=9.1Ω,

RD = 2.4Ω

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

-16

Maximum Body-Diode Pulsed Current

ISM

(Note 1)

-64

Drain-Source Diode Forward Voltage

VSD

IS=-16A, VGS=0V (Note 2)

-1.3

Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.

2. Pulse width≤300µs; duty cycle≤2%.

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