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UTP45N02-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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UTP45N02-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UTP45N02
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-180.A
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±10
V
Continuous Drain Current
ID
45
A
90
W
Power Dissipation
Derate Above 25℃
PD
0.606
W/℃
Junction Temperature
TJ
+175
℃
Storage Temperature
TSTG
-55 ~ +175
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient
θJA
80
/W
℃
Junction to Case
θJC
1.65
/W
℃
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS =0V, ID =250 µA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS =0 V
1
µA
Gate-to-Source Leakage Current
IGSS
VGS = ±10 V
±100
nA
ON CHARACTERISTICS
Gate to Source Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
2
V
Drain-to-Source On Resistance
RDS(ON)
VGS = 5V, ID =45 A
0.022
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
1300
Output Capacitance
COSS
724
Reverse Transfer Capacitance
CRSS
VDS =15 V, VGS =0V, f=1MHz
250
pF
SWITCHING PARAMETERS
Turn-ON Time
tON
260
Turn-ON Delay Time
tD(ON)
15
Turn-ON Rise Time
tR
160
Turn-OFF Delay Time
tD(OFF)
20
Turn-OFF Fall-Time
tF
20
Turn-OFF Time
tOFF
VGS =5 V, VDD =15 V,
ID≈45 A, RGS = 5Ω,
RL = 0.33Ω
60
ns
Total Gate Charge
QG
VGS=0V~10V
50
60
Gate-Source Charge
QGS
VGS=0V ~ 5 V
30
36
Gate-Drain Charge
QGD
VGS=0V~ 1 V
VDD = 16V,
ID≈45A,
RL = 0.35Ω
1.5
1.8
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=45 A
1.5
V
Reverse Recovery Time
tRR
ISD = 45 A,dISD /dt = 100 A/µs
125
ns



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