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UTM3023-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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UTM3023-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UTM3023
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-178.A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
Gate-Source Voltage
VGSS
±20
V
Maximum Continuous Drain Current
ID
30
Maximum Pulsed Drain Current
IDM
70
A
Maximum Power Dissipation
PD
62.5
W
Maximum Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, IDS =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS =24 V, VGS =0 V
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, IDS =250 µA
1
1.5
2
V
VGS =10 V, IDS =20 A
15
20
Drain-Source On-State Resistance(Note 2)
RDS(ON)
VGS =5 V, IDS =10 A
22
28
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1200
Output Capacitance
COSS
220
Reverse Transfer Capacitance
CRSS
VDS =15 V, VGS =0V, f=1.0MHz
100
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
11
18
Turn-ON Rise Time
tR
17
26
Turn-OFF Delay Time
tD(OFF)
37
54
Turn-OFF Fall Time
tF
IDS=2 A,VDD=15 V,RG=6 Ω,
VGEN =10V
20
30
ns
Total Gate Charge (Note 2)
QG
15
20
Gate-Source Charge
QGS
5.8
Gate-Drain Charge
QGD
VDS =15V, VGS =5V, IDS =10A
3.8
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
ISD=15A,VGS=0V
0.7
1.3
V
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%
3. Surface Mounted on FR4 Board, t ≤ 10 sec.



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