UTM2513L-TN3-R datasheet(2/4 Pages) UTC

2 / 4 page

UTM2513

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-228.A

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current

Pulsed Drain Current

IDM

Power Dissipation

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width limited by TJ(MAX)

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, IDS=250µA

Drain-Source Leakage Current

IDSS

VDS=24V, VGS=0V

µA

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, IDS=250µA

1.30 1.80

2.50

VGS=10V, IDS=12A

10.5

Drain-Source On-State Resistance(Note)

RDS(ON)

VGS=4.5V, IDS=10A

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

1560

Output Capacitance

COSS

345

Reverse Transfer Capacitance

CRSS

VDS=15V, VGS=0V, f=1.0MHz

245

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note)

tD(ON)

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

272

285

Turn-OFF Fall Time

IDS=1A, VDD=15V, RG=3Ω,

168

172

Total Gate Charge (Note)

Gate-Source Charge

QGS

3.6

Gate-Drain Charge

QGD

VDS=15V, VGS=10V, IDS=10A

8.4

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note)

VSD

ISD=10A, VGS=0V

0.9

1.3

Note: Pulse width ≤300us, duty cycle ≤2%

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